This device allows current to flow in both directions but it is capable to block voltage only in forward direction (from the positive/collector to negative/emitter port). Its states depends on gate control signal (controlled commutation) and on the conditions imposed by the external circuit.
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Parameters
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Internal on resistance (Ron)
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The diode internal on resistance, in ohms (Ω).
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Internal off Resistance (Roff)
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The diode internal off resistance, in ohms (Ω).
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Discrete-time switch conductance (Gs)
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The signal to control on/off state of the switch.
See How to tune discrete-time switch condutance for detailed explanation.
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Switch admittance (Gs)
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The discrete-time switch conductance, in S.
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Relaxation (Relax)
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The relaxation parameter of the switch. Values can range between 0.1 for maximum performance or 10 for maximum stability.
See How to tune single switch parameters for detailed explanation.
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Damping resistance (Rdamp)
Damping resistance value, in ohms (Ω).
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Electrical Ports
From top to bottom, the electrical ports are the positive and negative ports of the source respectively named p1 and n1
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g | Digital input controlling the gate. This input could be assigned to a digital input channel or a signal coming from Simulink or HYPERSIM. |
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Characteristics
Advanced - Gen 4
Advanced parameters for Gen 4 solver architecture:
Discrete-time switch conductance (Gs)
are only visible when selecting Nodal Analysis (Gen4) circuit analysis method in Solver Settings.
Precision on how to tune this parameter can be found here: /wiki/spaces/FPET/pages/22924052.
Advanced - Gen 5
Advanced parameters for Gen 5 solver architecture:
Relaxation (Relax)
Damping resistance (Rdamp)
are only visible when selecting State-space Analysis (Gen5) circuit analysis method in Solver Settings.
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