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This block implements a FET module with antiparallel diode.

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The device allows current to flow in both directions but it is capable to block voltage only in forward direction (from the positive/drain to negative/source port). Its states depends on gate control signal (controlled commutation) and on the conditions imposed by the external circuit.

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The field-effect transistor (FET) uses an an electric field to  to control the flow of of current. FETs are devices with three terminals: source, gate, and and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the the conductivity between  between the drain and source.

Two Two anti-parallel or  or inverse-parallel diodes  diodes are connected in parallel but with their polarities reversed.

Parameters

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in parallel but with their polarities reversed.

Parameters

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Internal on resistance (Ron)

The diode internal on resistance, in ohms (Ω).

Internal off Resistance (Roff)

The diode internal off resistance, in ohms (Ω).

Gate control signal (g)

The signal to control on/off state of the switch.

Discrete-time switch conductance (Gs)

The discrete-time switch conductance, in S.

Internal resistance (Ron)The diode internal resistance Ron

See How to tune discrete-time switch condutance for detailed explanation.

Relaxation (Relax)

The relaxation parameter of the switch. Values can range between 0.1 for maximum performance or 10 for maximum stability.

See How to tune single switch parameters for detailed explanation.

Damping resistance (Rdamp)

Damping resistance value, in ohms (Ω).

Forward voltage (Vf)Amount of voltage required for current to flow through a diode, in V.

Inputs

  • Description of each input

Outputs

  • Description of each output

Electrical ports

  • Description of each electrical port

Characteristics

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See How to tune single switch parameters for detailed explanation.

Electrical Ports

  • From top to bottom, the electrical ports are the positive and negative ports of the source respectively named p1 and n1

Inputs

g

Digital input controlling the gate. This input could be assigned to a digital input channel or a signal coming from Simulink or HYPERSIM.

Characteristics

Advanced - Gen 4

Advanced parameters for Gen 4 solver architecture:

  • Discrete-time switch conductance (Gs)

are only visible when selecting Nodal Analysis (Gen4) circuit analysis method in Solver Settings.

Precision on how to tune this parameter can be found here: /wiki/spaces/FPET/pages/22924052.

Advanced - Gen 5

Advanced parameters for Gen 5 solver architecture:

  • Relaxation (Relax)

  • Damping resistance (Rdamp)

are only visible when selecting State-space Analysis (Gen5) circuit analysis method in Solver Settings.

Precision on how to tune those parameters can be found here: /wiki/spaces/FPET/pages/250380336.