Documentation Home Page OPAL-RT Schematic Editor Home Page
Pour la documentation en FRANÇAIS, utilisez l'outil de traduction de votre navigateur Chrome, Edge ou Safari. Voir un exemple.

Skip to end of metadata
Go to start of metadata

You are viewing an old version of this content. View the current version.

Compare with Current View Version History

« Previous Version 3 Next »

This block implements a FET module with antiparallel diode.

The field-effect transistor (FET) uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

Two anti-parallel or inverse-parallel diodes are connected in parallel but with their polarities reversed.

Parameters

Switch admittance (Gs)The discrete-time switch conductance, in S.
Internal resistance (Ron)The diode internal resistance Ron, in ohms (Ω).
Forward voltage (Vf)Amount of voltage required for current to flow through a diode, in V.

Inputs

  • Description of each input

Outputs

  • Description of each output

Electrical ports

  • Description of each electrical port

Characteristics

  • Some time, blocks have special characteristics that need to be explained. 
  • No labels