This block implements a single IGBT module.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling.
Parameters
| Switch admittance (Gs) | The discrete-time switch conductance, in S. |
|---|---|
| Internal resistance (Ron) | The diode internal resistance Ron, in ohms (Ω). |
Inputs
- Description of each input
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