IGBT

This device allows current to flow only in forward direction (from the positive/collector to negative/emitter port). Also, it is capable to block voltage only in forward direction. Its states depends on gate control signal (controlled commutation) and on the conditions imposed by the external circuit.

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An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling.

Parameters

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Electrical Ports

• From top to bottom, the electrical ports are the positive and negative ports of the source respectively named p1 and n1

Inputs

Characteristics