This block implements a single IGBT module.
device allows current to flow only in forward direction (from the positive/collector to negative/emitter port). Also, it is capable to block voltage only in forward direction. Its states depends on gate control signal (controlled commutation) and on the conditions imposed by the external circuit.
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An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The The IGBT combines combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a a single device device. Large Large IGBT modules typically typically consist of many devices in parallel and can have very high current-handling.
Parameters
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Inputs
- Description of each input
Outputs
- Description of each output
Electrical ports
- Description of each electrical port
Characteristics
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Electrical Ports
From top to bottom, the electrical ports are the positive and negative ports of the source respectively named p1 and n1
Inputs
g | Digital input controlling the gate. This input could be assigned to a digital input channel or a signal coming from Simulink or HYPERSIM. |
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Characteristics
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