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This block implements a single IGBT module.

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling.

Parameters


Switch admittance (Gs)The discrete-time switch conductance, in S.
Internal resistance (Ron)The diode internal resistance Ron, in ohms (Ω).


Inputs

  • Description of each input

Outputs

  • Description of each output

Electrical ports

  • Description of each electrical port

Characteristics

  • Some time, blocks have special characteristics that need to be explained. 
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