Documentation Home Page ◇ OPAL-RT Schematic Editor Home Page
Pour la documentation en FRANÇAIS, utilisez l'outil de traduction de votre navigateur Chrome, Edge ou Safari. Voir un exemple.
FET
This device allows current to flow only in forward direction (from the positive/drain to negative/source port). Also, it is capable to block voltage only in forward direction. Its states depends on gate control signal (controlled commutation) and on the conditions imposed by the external circuit.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
Parameters
Internal resistance (Ron) | The diode internal on resistance, in ohms (Ω). |
|---|---|
Internal off resistance (Roff) | The diode internal off resistance, in ohms (Ω). |
Gate control signal (g) | The signal to control on/off state of the switch. |
Discrete-time switch conductance (Gs) | The discrete-time switch conductance, in S. See How to tune discrete-time switch condutance for detailed explanation. |
Relaxation (Relax) | The relaxation parameter of the switch. Values can range between 0.1 for maximum performance or 10 for maximum stability. See How to tune single switch parameters for detailed explanation. |
Damping resistance (Rdamp) | Damping resistance value, in ohms (Ω). See How to tune single switch parameters for detailed explanation. |
Electrical Ports
From top to bottom, the electrical ports are the positive and negative ports of the source respectively named p1 and n1
Inputs
g | Digital input controlling the gate. This input could be assigned to a digital input channel or a signal coming from Simulink or HYPERSIM. |
|---|
Characteristics
Advanced - Gen 4
Advanced parameters for Gen 4 solver architecture:
Discrete-time switch conductance (Gs)
are only visible when selecting Nodal Analysis (Gen4) circuit analysis method in Solver Settings.
Precision on how to tune this parameter can be found here: https://opal-rt.atlassian.net/wiki/spaces/FPET/pages/22924052.
Advanced - Gen 5
Advanced parameters for Gen 5 solver architecture:
Relaxation (Relax)
Damping resistance (Rdamp)
are only visible when selecting State-space Analysis (Gen5) circuit analysis method in Solver Settings.
Precision on how to tune those parameters can be found here: https://opal-rt.atlassian.net/wiki/spaces/FPET/pages/250380336.
OPAL-RT TECHNOLOGIES, Inc. | 1751, rue Richardson, bureau 1060 | Montréal, Québec Canada H3K 1G6 | opal-rt.com | +1 514-935-2323